Leakage Current Reduction in CMOS Circuits Using Stacking Technique

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Leakage Power Reduction in Cmos Circuits Using Leakage Control Transistor Technique in Nanoscale Technology

In CMOS circuits, as the technology scales down to nanoscale, the sub-threshold leakage current increases with the decrease in the threshold voltage. LECTOR, a technique to tackle the leakage problem in CMOS circuits, uses two additional leakage control transistors, which are self-controlled, in a path from supply to ground which provides the additional resistance thereby reducing the leakage c...

متن کامل

Leakage Power Reduction in Cmos Circuits Using Leakage Control Transistor Technique in Nanoscale Technology

In this paper, we propose a leakage reduction technique. Because high leakage currents in deep submicron regimes are becoming a major contributor to total power dissipation of CMOS circuits. Sub threshold leakage current plays a very important role in power dissipation. So to reduce the sub threshold leakage current we proposed an adaptive voltage level (AVL) technique. Which optimize the overa...

متن کامل

Reduction of Leakage Power in Digital Logic Circuits Using Stacking Technique in 45 Nanometer Regime

Power dissipation due to leakage current in the digital circuits is a biggest factor which is considered specially while designing nanoscale circuits. This paper is exploring the ideas of reducing leakage current in static CMOS circuits by stacking the transistors in increasing numbers. Clearly it means that the stacking of OFF transistors in large numbers result a significant reduction in powe...

متن کامل

Leakage Current in Deep-Submicron CMOS Circuits

The high leakage current in deep submicron regimes is becoming a significant contributor to the power dissipation of CMOS circuits as the threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for the estimation and reduction of leakage power, especially in the low power application...

متن کامل

Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits

High leakage current in deep-submicrometer regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low-power applications. This paper r...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: International Journal of Scientific Research in Science, Engineering and Technology

سال: 2020

ISSN: 2394-4099,2395-1990

DOI: 10.32628/ijsrset207344